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Philips Semiconductors
Product specification
Silicon Diffused Power Transistor
BUT12AI
GENERAL DESCRIPTION
Improved high-voltage, high-speed glass-passivated npn power transistor in a TO220AB envelope specially suited for use in overhead/high frequency lighting ballast applications and converters, inverters, switching regulators, motor control systems, etc.
QUICK REFERENCE DATA
SYMBOL VCESM VCEO IC ICM Ptot VCEsat ICsat tf PARAMETER Collector-emitter voltage peak value Collector-emitter voltage (open base) Collector current (DC) Collector current peak value Total power dissipation Collector-emitter saturation voltage Collector saturation current Inductive fall time CONDITIONS VBE = 0 V TYP. 5 MAX. 1000 450 8 20 110 1.5 300 UNIT V V A A W V A ns
Ths 25 C IC = 5 A; IB = 0.86A ICon = 5 A; IBon = 1.0 A;Tj 100C
PINNING - TO220AB
PIN 1 2 3 tab base collector emitter collector DESCRIPTION
PIN CONFIGURATION
tab
SYMBOL
c b
1 23
e
LIMITING VALUES
Limiting values in accordance with the Absolute Maximum Rating System (IEC 134) SYMBOL VCESM VCEO IC ICM IB IBM Ptot Tstg Tj PARAMETER Collector-emitter voltage peak value Collector-emitter voltage (open base) Collector current (DC) Collector current peak value Base current (DC) Base current peak value Total power dissipation Storage temperature Junction temperature CONDITIONS VBE = 0 V MIN. -65 MAX. 1000 450 8 20 4 6 110 150 150 UNIT V V A A A A W C C
Ths 25 C
THERMAL RESISTANCES
SYMBOL Rth j-hs Rth j-a PARAMETER Junction to heatsink Junction to ambient CONDITIONS with heatsink compound in free air TYP. MAX. 1.15 60 UNIT K/W K/W
June 1997
1
Rev 1.000
Philips Semiconductors
Product specification
Silicon Diffused Power Transistor
BUT12AI
STATIC CHARACTERISTICS
Ths = 25 C unless otherwise specified SYMBOL ICES ICES IEBO VCEOsust VCEsat VBEsat hFE hFE hFEsat PARAMETER Collector cut-off current
1
CONDITIONS
MIN. 450 10 14 5.8
TYP. 18 20 10
MAX. 1.0 3.0 10 1.5 1.3 35 35 12.5
UNIT mA mA mA V V V
VBE = 0 V; VCE = VCESMmax VBE = 0 V; VCE = VCESMmax; Tj = 125 C Emitter cut-off current VEB = 9 V; IC = 0 A Collector-emitter sustaining voltage IB = 0 A; IC = 100 mA; L = 25 mH Collector-emitter saturation voltages IC = 5 A; IB = 0.86 A Base-emitter saturation voltage IC = 5 A; IB = 0.86 A DC current gain IC = 10mA; VCE = 5 V IC = 1.0A; VCE = 5 V IC = 5.0A; VCE = 1.5 V
DYNAMIC CHARACTERISTICS
Ths = 25 C unless otherwise specified SYMBOL ton ts tf PARAMETER Switching times (resistive load) Turn-on time Turn-off storage time Turn-off fall time Switching times (inductive load) ts tf Turn-off storage time Turn-off fall time CONDITIONS ICon =5 A; IBon = -IBoff = 1.0 A TYP. MAX. 1.0 4.0 0.8 UNIT s s s s ns
ICon = 5 A; IBon = 1.0 A; LB = 1 H; -VBB = 5 V; Tj = 100 C
1.9 150
2.5 300
IC / mA
+ 50v 100-200R
250
Horizontal Oscilloscope Vertical 300R 30-60 Hz 6V 1R
200
100
0 VCE / V
min VCEOsust
Fig.1. Test circuit for VCEOsust.
Fig.2. Oscilloscope display for VCEOsust.
1 Measured with half sine-wave voltage (curve tracer).
June 1997
2
Rev 1.000
Philips Semiconductors
Product specification
Silicon Diffused Power Transistor
BUT12AI
VCC
ICon 90 % IC
RL VIM 0 tp
IB
RB T.U.T.
ts toff IBon
10 % tf t
T
-IBoff
t
Fig.3. Test circuit resistive load. VIM = -6 to +8 V VCC = 250 V; tp = 20 s; = tp / T = 0.01. RB and RL calculated from ICon and IBon requirements.
ICon
Fig.6. Switching times waveforms with inductive load.
90 %
90 %
VCC
IC 10 % ts ton toff IBon 10 % tr 30ns -IBoff tf
LC
IB
IBend
VCL LB T.U.T.
CFB
-VBB
Fig.4. Switching times waveforms with resistive load.
Fig.7. Test circuit RBSOA. VCC = 150 V; -VBB = 5 V LC = 200 H; VCL 850 V; LB = 1 H
PD% Normalised Power Derating
VCC
120 110 100 90 80
LC
70 60 50
IBon
LB T.U.T.
40 30 20 10 0 0 20 40 60 80 100 Tmb / C 120 140
-VBB
Fig.5. Test circuit inductive load. VCC = 300 V; -VBE = 5 V;LB = 1 uH
Fig.8. Normalised power dissipation. PD% = 100PD/PD 25C = f (Tmb)
June 1997
3
Rev 1.000
Philips Semiconductors
Product specification
Silicon Diffused Power Transistor
BUT12AI
VBEsat / V 1.2 1.1 1 0.9 0.8 0.7 0.6 0.5 0.4 1 10 IC / A Fig.9. Typical base-emitter saturation voltage. VBEsat = f(IC); parameter IC/IB 0.1 IC/IB= 8 10 12
1 0.9 0.8 0.7 0.6 1.2
VBEsat / V
Tj = 25 C Tj = 125 C
1.1
Tj = 25 C Tj = 125 C
IC = 6A 3A 2A
0
0.4
0.8
1.2 IB / A
1.6
2
2.4
Fig.11. Typical base-emitter saturation voltage. VBEsat = f(IB); parameter IC
VCEsat / V 10 Tj = 25 C Tj = 125 C
VCEsat / V 1 0.9 0.8 0.7 0.6 0.5 0.4 0.3 0.2 0.1 0 0.1 1 IC / A 10 Tj = 25 C Tj = 125 C IC/IB= 12 10 8
5
6A 1 4A
IC=2A
0.1
Fig.10. Typical collector-emitter saturation voltage. VCEsat = f(IC); parameter IC/IB
1 10 IB / A Fig.12. Typical collector-emitter saturation voltage. VCEsat = f(IB); parameter IC
0.1
June 1997
4
Rev 1.000
Philips Semiconductors
Product specification
Silicon Diffused Power Transistor
BUT12AI
IC / A 100
h FE 100
ICMmax 10
5V
ICmax
10
II
1V
1
Tj = 25 C Tj = 125 C
I
0.1 DC
1 0.01
0.1 IC / A
1
10
Fig.15. Typical DC current gain. hFE = f(IC) parameter VCE
0.01 1 10 100 1000 VCE / V
Fig.13. Forward bias safe operating area. Tmb = 25C I II NB: Region of permissible DC operation. Extension for repetitive pulse operation. Mounted with heatsink compound and 30 5 newton force on the centre of the envelope.
1E+01
IC / A
8 7
Zth / (K/W)
BUX100
6 5 4 3 2 1 0
1E+00 0.5 0.2 0.1 1E-01 0.05 0.02 D=0 1E-02
0 200 400 600 800 1000
P D
tp
D=
tp
T t
T 1E-05 1E-03 t/s 1E-01
1E+01
VCE / V
Fig.14. Reverse bias safe operating area. Tj Tj max
Fig.16. Transient thermal impedance. Zth j-mb = f(t); parameter D = tp/T
June 1997
5
Rev 1.000
Philips Semiconductors
Product specification
Silicon Diffused Power Transistor
BUT12AI
MECHANICAL DATA
Dimensions in mm Net Mass: 2 g
4,5 max 10,3 max
1,3
3,7 2,8
5,9 min
15,8 max
3,0 max not tinned
3,0
13,5 min
1,3 max 1 2 3 (2x)
2,54 2,54
0,9 max (3x)
0,6 2,4
Fig.17. TO220AB; pin 2 connected to mounting base.
Notes 1. Refer to mounting instructions for TO220 envelopes. 2. Epoxy meets UL94 V0 at 1/8".
June 1997
6
Rev 1.000
Philips Semiconductors
Product specification
Silicon Diffused Power Transistor
BUT12AI
DEFINITIONS
Data sheet status Objective specification Product specification Limiting values Limiting values are given in accordance with the Absolute Maximum Rating System (IEC 134). Stress above one or more of the limiting values may cause permanent damage to the device. These are stress ratings only and operation of the device at these or at any other conditions above those given in the Characteristics sections of this specification is not implied. Exposure to limiting values for extended periods may affect device reliability. Application information Where application information is given, it is advisory and does not form part of the specification. (c) Philips Electronics N.V. 1997 All rights are reserved. Reproduction in whole or in part is prohibited without the prior written consent of the copyright owner. The information presented in this document does not form part of any quotation or contract, it is believed to be accurate and reliable and may be changed without notice. No liability will be accepted by the publisher for any consequence of its use. Publication thereof does not convey nor imply any license under patent or other industrial or intellectual property rights. This data sheet contains target or goal specifications for product development. This data sheet contains final product specifications. Preliminary specification This data sheet contains preliminary data; supplementary data may be published later.
LIFE SUPPORT APPLICATIONS
These products are not designed for use in life support appliances, devices or systems where malfunction of these products can be reasonably expected to result in personal injury. Philips customers using or selling these products for use in such applications do so at their own risk and agree to fully indemnify Philips for any damages resulting from such improper use or sale.
June 1997
7
Rev 1.000

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